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      https://www.ias.ac.in/article/fulltext/boms/025/02/0163-0168

    • Keywords

       

      Aluminium oxide; optical properties; ellipsometry; MOCVD.

    • Abstract

       

      Spectroscopic ellipsometry was used to characterize carbonaceous, crystalline aluminium oxide films grown on Si(100) by low-pressure metal organic chemical vapour deposition, using aluminium acetylacetonate as the precursor. The presence of carbon in the films, attribured to the use of a metalorganic precursor for the deposition of films, was identified and analysed by secondary ion mass spectroscopy and X-ray photoelectron sectroscopy, for the elemental distribution and the chemical nature of the carbon in the films, respectively. Ellipsometry measurments over the photon energy range 1.5-5 eV were used to derive the pseudo-dielectric function of the aluminium oxide-containing films. Multi-layer modelling using linear regression techniques and the effective medium approximation were carried out to extract the structural details of the specimens. The excellent fit between the simulated and experimental optical data validates the empirical model for alumina-containing coatings grown by MOCVD.

    • Author Affiliations

       

      M P Singh1 G Raghavan2 A K Tyagi2 S A Shivashankar1

      1. Materials Research Center, Indian Institute of Science, Bangalore 560 012, India
      2. Materials Science Division, Indira Gandhi Center for Atomic Research, Kalpakkam 603 102, India
    • Dates

       
  • Bulletin of Materials Science | News

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      Posted on July 25, 2019

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