One of the most pressing issues in the growth of high quality single crystal Cd0.96Zn0.04Te material, is to achieve homogenization of the high axial variation of Zn concentration, caused by the larger than unity segregation coefficient of Zn in CdTe. This is achieved in our crystals
by thermal annealing of the CdZnTe crystal, which redistributes the as grown Zn distribution by solid state diffusion of Zn (this solid state diffusion of Zn occurs at three stages during the growth when the solidified crystal is near to the melting point temperature, during the post growth annealing of the crystal at a high temperature and during the cooldown to room temperature) and
during the growth when the solidified crystal is near to the melting point temperature,
during the post growth annealing of the crystal at a high temperature and
during the cooldown to room temperature) and
by the reduction of Zn segregation during the growth stage by enhanced convective mixing of the melt, through a proper choice of ampoule and furnace dimensions.
By adopting suitable growth parameters and sufficient post growth annealing it has been possible to grow Cd0.96Zn0.04Te crystals, which have nearly 75% of their fraction within 1% Zn concentration variation.
Volume 45, 2022
Continuous Article Publishing mode
Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020
Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020
Click here for Editorial Note on CAP Mode