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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/024/06/0579-0582

    • Keywords

       

      Zirconium dioxide; high-k; PECVD; EOT.

    • Abstract

       

      ZrO2 films on silicon wafer were deposited by microwave plasma enhanced chemical vapour deposition technique using zirconium tetratert butoxide (ZTB). The structure and composition of the deposited layers were studied by fourier transform infrared spectroscopy (FTIR). The deposition rates were also studied. MOS capacitors fabricated using deposited oxides were used to characterize the electrical properties of ZrO2 films. The films showed their suitability for microelectronic applications.

    • Author Affiliations

       

      S Chatterjee1 S K Samanta1 H D Banerjee2 C K Maiti1

      1. Department of Electronics & ECE, Indian Institute of Technology, Kharagpur 721 302, India
      2. Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302, India
    • Dates

       

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