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      https://www.ias.ac.in/article/fulltext/boms/024/03/0285-0289

    • Keywords

       

      Nanocrystalline silicon; Raman scattering; photoluminescence; porous silicon.

    • Abstract

       

      We investigated the optical properties of silicon clusters and Si nanocrystallites using photoluminescence (PL) and Raman scattering technique. Broad luminescence band in the red region was observed from Si-doped SiO2 thin films deposited by co-sputtering of Si and SiO2 on 𝑝-type Si (100) substrates, annealed in Ar and O2 atmosphere. Nanocrystalline Si particles fabricated by pulsed plasma processing technique showed infrared luminescence from as grown film at room temperature. Raman spectra from these films consisted of broad band superimposed on a sharp line near 516 cm–1 whose intensity, frequency, and width depend on the particle sizes arising from the phonon confinement in the nanocrystalline silicon. We also performed PL, Raman and resonantly excited PL measurements on porous silicon film to compare the optical properties of Si nanostructures grown by different techniques. An extensive computer simulation using empirical pseudopotential method was carried out for 5–18 atoms Si clusters and the calculated gap energies were close to our PL data.

    • Author Affiliations

       

      S Tripathy1 R K Soni1 S K Ghoshal1 K P Jain1

      1. Department of Physics, Indian Institute of Technology, New Delhi 110 016, India
    • Dates

       
  • Bulletin of Materials Science | News

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