Effect of 80 keV Ar+ implantation on the properties of pulse laser deposited magnetite (Fe3O4) thin films
Highly oriented thin films of Fe3O4 were deposited on (100) LaAlO3 substrates by pulsed laser ablation. The structural quality of the films was confirmed by X-ray diffraction (XRD). The films showed a Verwey transition near 120 K. The films were subjected to 80 keV Ar+ implantation at different ion doses up to a maximum of 6 × 1014 ions/cm2. Ion beam induced modifications in the films were investigated using XRD and resistance vs temperature measurements. Implantation decreases the change in resistance at 120 K and this effect saturates beyond 3 × 1014 ions/cm2. The Verwey transition temperature, 𝑇𝑣, shifts towards lower temperatures with increase in ion dose.
U D Lanke1 2
Volume 42 | Issue 4