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      https://www.ias.ac.in/article/fulltext/boms/023/06/0471-0474

    • Keywords

       

      Schottky barrier height; metal-semiconductor interface; current-voltage characteristics; thermionic emission; ideality factor; lateral inhomogeneities in SBH

    • Abstract

       

      The influence of temperature on current-voltage (I-V) characteristics of Au/n-GaAs Schottky diode formed on n-GaAs epitaxial layer grown by metal organic chemical vapour deposition technique has been investigated. The dopant concentration in the epitaxial layer is 1 X 1016 cm-3. The change in various parameters of the diode like Schottky barrier height (SBH), ideality factor and reverse breakdown voltage as a function of temperature in the range 80–300 K is presented. The variation of apparent Schottky barrier height and ideality factor with temperature has been explained considering lateral inhomogeneities in the Schottky barrier height in nanometer scale lengths at the metal-semiconductor interface

    • Author Affiliations

       

      R Singh1 S K Arora1 Renu Tyagi1 2 S K Agarwal1 2 D Kanjilal1

      1. Nuclear Science Centre, Aruna Asaf Ali Marg, New Delhi - 110 067, India
      2. Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi - 110 054, India
    • Dates

       
  • Bulletin of Materials Science | News

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