• Current-voltage studies on β-FeSi2/Si heterojunction

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    • Keywords


      Silicide; semiconducting silicide; heterojunction; pulsed laser; I-V characteristics

    • Abstract


      I-V characteristics of both β-FeSi2/n-Si and β-FeSi2/p-Si were studied at room temperature. The junctions were formed by depositing Fe on Si selectively followed by thermal annealing and some samples were later treated by pulsed laser. Temperature of thermal annealing and diode area were also varied.I-V studies on all these samples were done and ideality factors were computed. Results obtained were interpreted.

    • Author Affiliations


      A Datta1 S Kal1 2 S Basu1

      1. Materials Science Centre, Indian Institute of Technology, Kharagpur - 721 302, India
      2. Department of Electronics & ECE, Indian Institute of Technology, Kharagpur - 721 302, India
    • Dates

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

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      Posted on July 25, 2019

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