Due to a lack of proper understanding about the formation mechanism of oxygen related donors during the transition temperature range (465–540°C) which exhibits the transition of TDs to NDs, an attempt has been made to study their behaviour in the present context. We have found the formation and diffusion of molecule like oxygen at low temperature annealing of silicon and observed that second order kinetics of oxygen diffusion holds good. A relatively low value of 0·6 eV has been estimated to be the activation energy for the diffusion of oxygen in silicon which is supposed to be due to the hydrogen passivation.
Volume 43, 2020
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