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    • Keywords


      Epitaxial layer; metal organic chemical vapour deposition; InGaAs; lattice mismatch

    • Abstract


      InxGa1−xAs (0·06≤x≤0·35) epilayers were grown on GaAs substrates by atmospheric pressure metal organic chemical vapour deposition technique. Surface morphology and lattice mismatch in the InGaAs/GaAs films of different compositions were studied. Cross-hatched patterns were observed on the surface of the epilayers for bulk alloy composition up tox≈0·25. Forx>0·3, a rough textured surface morphology was observed.

    • Author Affiliations


      R Pal1 M Singh1 R Murlidharan1 S K Agarwal1 D Pal1 2 D N Bose1 2

      1. Solid State Physics Laboratory, Lucknow Road, Delhi - 110 054, India
      2. Semiconductor Division, Materials Science Centre, Indian Institute of Technology, Kharagpur - 371 302, India
    • Dates

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

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