• Fulltext

       

        Click here to view fulltext PDF


      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/021/04/0313-0316

    • Keywords

       

      Epitaxial layer; metal organic chemical vapour deposition; InGaAs; lattice mismatch

    • Abstract

       

      InxGa1−xAs (0·06≤x≤0·35) epilayers were grown on GaAs substrates by atmospheric pressure metal organic chemical vapour deposition technique. Surface morphology and lattice mismatch in the InGaAs/GaAs films of different compositions were studied. Cross-hatched patterns were observed on the surface of the epilayers for bulk alloy composition up tox≈0·25. Forx>0·3, a rough textured surface morphology was observed.

    • Author Affiliations

       

      R Pal1 M Singh1 R Murlidharan1 S K Agarwal1 D Pal1 2 D N Bose1 2

      1. Solid State Physics Laboratory, Lucknow Road, Delhi - 110 054, India
      2. Semiconductor Division, Materials Science Centre, Indian Institute of Technology, Kharagpur - 371 302, India
    • Dates

       
  • Bulletin of Materials Science | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2017-2019 Indian Academy of Sciences, Bengaluru.