1. Home
    2. Journals
    3. Bulletin of Materials Science
    4. Volume 21
    5. Issue 4

    • Fulltext

       

        Click here to view fulltext PDF


      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/021/04/0313-0316

    • Keywords

       

      Epitaxial layer; metal organic chemical vapour deposition; InGaAs; lattice mismatch

    • Abstract

       

      InxGa1−xAs (0·06≤x≤0·35) epilayers were grown on GaAs substrates by atmospheric pressure metal organic chemical vapour deposition technique. Surface morphology and lattice mismatch in the InGaAs/GaAs films of different compositions were studied. Cross-hatched patterns were observed on the surface of the epilayers for bulk alloy composition up tox≈0·25. Forx>0·3, a rough textured surface morphology was observed.

    • Author Affiliations

       

      R Pal1 M Singh1 R Murlidharan1 S K Agarwal1 D Pal1 2 D N Bose1 2

      1. Solid State Physics Laboratory, Lucknow Road, Delhi - 110 054, India
      2. Semiconductor Division, Materials Science Centre, Indian Institute of Technology, Kharagpur - 371 302, India

    • Dates

       
      Published
      August 1998
      Manuscript received
      4 August 1997
      Manuscript revised
      20 April 1998

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2022-2023 Indian Academy of Sciences, Bengaluru.

Contact | Site index