Silicon dioxide films on strained Si1−xGex have been deposited by electron cyclotron resonance (ECR) plasma-enhanced chemical vapour deposition technique using tetraethylorthosilicate (TEOS) at room temperature. The deposition rate as a function of time and substrate temperature has been studied. MOS capacitors fabricated using deposited oxides have been used to characterize the electrical properties of silicon dioxide films. Deposited oxide film shows its suitability for microelectronic applications.
Volume 43, 2020
Continuous Article Publishing mode
Click here for Editorial Note on CAP Mode