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Electron cyclotron resonance (ECR) plasma-enhanced chemical vapour deposition of silicon dioxide on strained-SiGe films using tetraethylorthosilicate
L K Bera S K Ray H D Banerjee C K Maiti
Material Synthesis Volume 21 Issue 4 August 1998 pp 283-286
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Keywords
Silicon-germanium ;silicon dioxide ;ECR plasma deposition ;TEOS -
Abstract
Silicon dioxide films on strained Si1−xGex have been deposited by electron cyclotron resonance (ECR) plasma-enhanced chemical vapour deposition technique using tetraethylorthosilicate (TEOS) at room temperature. The deposition rate as a function of time and substrate temperature has been studied. MOS capacitors fabricated using deposited oxides have been used to characterize the electrical properties of silicon dioxide films. Deposited oxide film shows its suitability for microelectronic applications.
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Author Affiliations
L K Bera1 S K Ray1 2 H D Banerjee1 3 C K Maiti1
- Department of Electronics and ECE, Indian Institute of Technology, Kharagpur - 721 302, India
- Department of Physics, Indian Institute of Technology, Kharagpur - 721 302, India
- Materials Science Centre, Indian Institute of Technology, Kharagpur - 721 302, India
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Dates
- Published
- August 1998
- Manuscript received
- 13 February 1998
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