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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/021/03/0195-0201

    • Keywords

       

      Porous silicon; p-type Si

    • Abstract

       

      A simple extension of Beale’s and Lehmann’s models for the formation of porous silicon layer onp-type silicon is proposed with a view to explain the experimental conditions necessary for obtaining either uniform vertical pores or non-uniform pore branching, as desired. A uniformity parameter is defined and correlated with the measured porosity. The dependence of the porosity and the uniformity factor with the various formation parameters of porous layer are studied experimentally and explained qualitatively.

    • Author Affiliations

       

      H Saha1 S K Dutta1 2 S M Hossain1 S Chakraborty1 A Saha1

      1. Department of Electronics and Tele-communication Engineering, Jadavpur University, Calcutta - 700 032, India
      2. Department of Physics, City College, Calcutta - 700 009, India
    • Dates

       
  • Bulletin of Materials Science | News

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      Posted on July 25, 2019

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