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      https://www.ias.ac.in/article/fulltext/boms/020/08/1069-1077

    • Keywords

       

      KDP; heavy-ion irradiation; implantation; dielectric constant; electrical conductivity; nonlinear crystal; property of sensitive dependence; chaos

    • Abstract

       

      Implantations were carried out on gel-grown potassium dihydrogen orthophosphate (KDP) and those doped with magnesium oxide (MgO) single crystals using 100 MeV Ag+ heavy-ion beam of 15 UD 16 MV pelletron accelerator. To conduct a comparative study, measurements were carried out in the temperature range 243 K-403 K at frequencies ranging from 1 kHz-1 MHz on irradiated and nonirradiated nonlinear samples. It was observed that the mechanism of dielectric behaviour varied with frequency, temperature and ion irradiation. Further, implantation produced erratic variation in the conductivity both in the intrinsic and extrinsic regions, and also in the dielectric behaviour of the substance. The property of sensitive dependence on initial conditions, namely, chaos had set in after ion irradiation. However, the doping effect had not completely terminated the above transition, leading to chaos in the nonlinear medium.

    • Author Affiliations

       

      K Somashekhara Udupa1 P Mohan Rao1 2 Sriramana Aithal1 3 A P Bhat1 4 D K Avasthi1 5

      1. Department of Physics, Bhandarkar’s College, Kundapur - 576 201, India
      2. Department of Physics, Mangalore University, Mangalagangotri - 574 199, India
      3. Department of Electronics, NASM College, Nitte - 574 110, India
      4. Department of Physics, Poornaprajna College, Udupi - 576 101, India
      5. Nuclear Science Centre, Aruna Asaf Ali Marg, New Delhi - 110 067, India
    • Dates

       
  • Bulletin of Materials Science | News

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