• Preparation and characterization of indium oxide (In2O3) films by activated reactive evaporation

    • Fulltext

       

        Click here to view fulltext PDF


      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/020/08/1029-1038

    • Keywords

       

      Thin films; semiconductors; oxides; evaporation method

    • Abstract

       

      The electrical and optical properties of In2O3 films prepared at room temperature by activated reactive evaporation have been studied. Hall effect measurements at room temperature show that the films have a relatively high mobility 15 cm2v−1s−1, high carrier concentration 2·97 × 1020/cm3, with a low resistivityρ = 1·35 × 10−3 ohm cm. As-prepared film is polycrystalline. It shows both direct and indirect allowed transitions with band gaps of 3·52eV and 2·94eV respectively.

    • Author Affiliations

       

      M D Benoy1 B Pradeep1

      1. Department of Physics, Cochin University of Science and Technology, Kochi - 682 022, India
    • Dates

       
  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2021-2022 Indian Academy of Sciences, Bengaluru.