• Preparation and characterization of indium oxide (In2O3) films by activated reactive evaporation

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    • Keywords


      Thin films; semiconductors; oxides; evaporation method

    • Abstract


      The electrical and optical properties of In2O3 films prepared at room temperature by activated reactive evaporation have been studied. Hall effect measurements at room temperature show that the films have a relatively high mobility 15 cm2v−1s−1, high carrier concentration 2·97 × 1020/cm3, with a low resistivityρ = 1·35 × 10−3 ohm cm. As-prepared film is polycrystalline. It shows both direct and indirect allowed transitions with band gaps of 3·52eV and 2·94eV respectively.

    • Author Affiliations


      M D Benoy1 B Pradeep1

      1. Department of Physics, Cochin University of Science and Technology, Kochi - 682 022, India
    • Dates

  • Bulletin of Materials Science | News

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