The electrical and optical properties of In2O3 films prepared at room temperature by activated reactive evaporation have been studied. Hall effect measurements at room temperature show that the films have a relatively high mobility 15 cm2v−1s−1, high carrier concentration 2·97 × 1020/cm3, with a low resistivityρ = 1·35 × 10−3 ohm cm. As-prepared film is polycrystalline. It shows both direct and indirect allowed transitions with band gaps of 3·52eV and 2·94eV respectively.
Volume 43, 2020
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