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    • Keywords


      Quantum chemical studies; a-Si: H; initial surface process

    • Abstract


      The surface morphology ofa-Si: H is strongly dependent on substrate material and temperature, especially in the initial stage of deposition. Furthermore, some surface treatments could induce a drastic change in the initial growth mode. For example, the hydrogen plasma treatment of highly oriented pyrolytic graphite (HOPG) surface prior toa-Si: H deposition changed the growth mode from inhomogeneous to homogeneous one. In order to elucidate this surface chemical process, molecular orbital calculations were performed and compared with the experimental observation of the surface by AFM and STM. The calculation verified hydrogen addition tosp2 carbons on HOPG to facilitate the bonding of SiH3 to neighbouring carbons, which correspond to the nucleation or pinning of precursors as the origin of homogeneous growth ofa-Si: H film.

    • Author Affiliations


      Hideomi Koinuma1 Kenji Nakajima1 Kaori Miyazaki1

      1. Ceramics Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama - 227, Japan
    • Dates

  • Bulletin of Materials Science | News

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      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

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