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Vacuum evaporation; tellurium; dielectric; electrical properties

Results of dielectric and conduction properties of vacuum evaporated tellurium (Te) thin film capacitors (Al-Te-Al) have been reported in the frequency range 1–100 kHz at various temperatures (303–423 K). Loss factor (tanδ) which shows a maximum with frequency increases with rise of temperature and tanδ_max shift towards high frequency region. The large values of capacitance and dielectric constant (ɛ′) in the low frequency region indicate the possibility of an interfacial polarization mechanism.I-V characteristics show ohmic, space charge limited (SCLC) and thermionic emission conduction mechanisms to operate at low, intermediate and high voltages respectively. Various transport parameters have been calculated. It has been observed that the Schottky type of conduction is predominant in the high field region and the Schottky barrier height has been determined. The Hall coefficient, Hall mobility and carrier concentration are also discussed.

T Balasubramaniam^{1 2} Sa K Narayandass¹ D Mangalaraj¹

1. Department of Physics, Bharathiar University, Coimbatore - 641 046, India
2. Department of Physics, Kongunadu Arts and Science College, Coimbatore - 641 029, India

Published

February 1997

Manuscript received

20 June 1996

Manuscript revised

22 November 1996