• Nanocrystallization in Si:H and quantum size effect on optical gap

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    • Keywords


      Interrupted growth; stacking layer; H-plasma exposure; wide band gap; nanocrystallization and quantum size effect

    • Abstract


      Interruption of growth and H-plasma exposure on stacking layers of Si:H film resulted in a remarkable change in material properties. Widening of optical gap and increase in dark conductivity were simultaneous with the reduction in photoconductivity, bonded hydrogen content and optical absorption. An associated change in the network structure from amorphous towards crystalline was observed. Enhanced dose of plasma exposure resulted in the gradual lowering in the size of nanograins and increase in their number density. Systematic widening in optical gap during dehydrogenation of the network appears to be a unique feature related to amorphous semiconductors, which suggests nanocrystallization and quantum size effect in hydrogenated binary alloy.

    • Author Affiliations


      Debajyoti Das1

      1. Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Calcutta - 700 032, India
    • Dates

  • Bulletin of Materials Science | News

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      Posted on July 25, 2019

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