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      https://www.ias.ac.in/article/fulltext/boms/019/03/0475-0481

    • Keywords

       

      Yttrium iron garnet; thin films; MOCVD; LPCVD; dipivaloyl methanates; inplane magnetization; orthoferrite; yttrium oxide

    • Abstract

       

      Yttrium iron garnet thin films have been prepared by low pressure metallo-organic chemical vapour deposition method (MOCVD). Dipivaloyl methanates of yttrium and iron have been used as the precursors in the MOCVD growth of the garnet films. Post deposition O2 annealing at 900°C is required to form a garnet phase which also shows orthoferrite and component Y2O3 and α-Fe2O3 phases. We show that a partial H2 reduction treatment minimizes secondary phases and stabilizes the garnet phase. These treatments also enhance the magnetic properties considerably.

    • Author Affiliations

       

      A C Rastogi1 V N Moorthy1 Sandip Dhara1 H P Gupta1 B R Awasthy1 B K Das1

      1. Materials Division, National Physical Laboratory, New Delhi - 110012, India
    • Dates

       
  • Bulletin of Materials Science | News

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