• Photoconductive relaxation studies of SnSe thin films

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    • Keywords

       

      Thin films; tin selenide; photoconductive relaxation; grain boundary potential barrier

    • Abstract

       

      The compound tin selenide was prepared from the constituent elements (Sn and Se) using the standard fusing technique and from X-ray diffraction studies it was identified as tin selenide. Thin films of SnSe were obtained on thoroughly cleaned glass substrates by vacuum sublimation on substrates maintained at 301 K. The photoconductive relaxation of these films was studied with oxidation. The results have been explained with the help of grain boundary potential barrier model.

    • Author Affiliations

       

      T Subba Rao1 2 A K Chaudhuri1

      1. Department of Physics, Indian Institute of Technology, Kharagpur - 721 302, India
      2. Department of Physics, SV University PG Centre, Kurnool - 518 001, India
    • Dates

       
  • Bulletin of Materials Science | News

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