Gamma (γ) iron oxide thin films containing 6 at% of cobalt atoms selectively dispersed at interstitial and octahedral locations have been prepared by a reactive chemical vapour deposition process. Such dispersion gives microscopic Co-trapped and Co-doped regions inγ-Fe2O3 matrix and introduces magnetocrystalline anisotropy leading to high coercivity values of 64–112 kA/m. Temperature dependence of coercivity and saturation magnetization forγ-Fe2O3 films confirm the dispersion model.
Volume 42 | Issue 6
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