• Preparation and characterization of ultra-thin cobalt silicide for VLSI applications

    • Fulltext


        Click here to view fulltext PDF

      Permanent link:

    • Keywords


      CoSi2; RTA; XRD; RBS

    • Abstract


      Ultra-thin cobalt silicide (CoSi2) was formed from 10 nm cobalt film by solid phase reaction of Co and Si by use of rapid thermal annealing (RTA). The Ge+ ion implantation through Co film caused the interface mixing of the cobalt film with the silicon substrate and resulted in a homogeneous silicide layer. XRD was used to identify the silicide phases that were present in the film. The metallurgical analysis was performed by RBS. XRD and RBS investigations showed that final RTA temperature should not exceed 800°C for thin (< 50 nm) CoSi2 formation.

    • Author Affiliations


      S Kal1 I Kasko1 2 H Ryssel1 2

      1. Microelectronics Centre, Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur - 721 302, India
      2. Lehrstuhl fur Elektronische Bauelemente, Universitat Erlangen-Nurnberg, Cauerstrasse 6, Erlangen - D-91058, Germany
    • Dates

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2021-2022 Indian Academy of Sciences, Bengaluru.