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      https://www.ias.ac.in/article/fulltext/boms/017/05/0551-0561

    • Keywords

       

      Porous silicon; p-n junction

    • Abstract

       

      Efforts have been made to see the effect of some standard microelectronic processing steps on porous silicon. Our diffusion experiments for making p-n junctions confirm that this material can withstand high temperatures of the order of 800°C to 1000°C. A new technique for photolithography has been suggested to obtain porous silicon in selected areas. Etch stop method to control the thickness of the porous layer and an organic protective layer for porous silicon have also been suggested. Models proposed by other workers to explain luminescence in porous silicon are not sufficient to explain many experimental observations. A hybrid model is suggested.

    • Author Affiliations

       

      V K Jain1 Amita Gupta1 C R Jalwania1 Adarsh Kumar1 G K Singhal1 O P Arora1 D S Ahuja1 P P Puri1 R Singh1 M Pal1

      1. Solid State Physics Laboratory, Lucknow Road, Delhi - 110 054, India
    • Dates

       
  • Bulletin of Materials Science | News

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