• Fulltext

       

        Click here to view fulltext PDF


      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/017/05/0505-0511

    • Keywords

       

      Porous silicon; Raman scattering; photoluminescence

    • Abstract

       

      We report Raman scattering and photoluminescence studies on porous silicon film formed on n-type silicon. The Raman spectra over the sample surface exhibit considerable variation whereas the photoluminescence spectra are practically identical. Our results indicate that, well inside the film surface, it consists of spherical nanocrystals of typical diameter ≈ 100Å, while on the edge these nanocrystals are ⩾ 300Å. We further observe that there is no correlation between the photoluminescence peak position and the nanocrystal diameter. This suggests that the origin of the photoluminescence is due to radiative recombination between defect states in the bulk as well as on the surface of the nanocrystal.

    • Author Affiliations

       

      S K Deb1 Neelu Mathur1 A P Roy1 S Banerjee1 2 A Sardesai1 2

      1. Solid State Physics Division, Bhabha Atomic Research Centre, Bombay - 400 085, India
      2. Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay - 400 005, India
    • Dates

       
  • Bulletin of Materials Science | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2017-2019 Indian Academy of Sciences, Bengaluru.