We report Raman scattering and photoluminescence studies on porous silicon film formed on n-type silicon. The Raman spectra over the sample surface exhibit considerable variation whereas the photoluminescence spectra are practically identical. Our results indicate that, well inside the film surface, it consists of spherical nanocrystals of typical diameter ≈ 100Å, while on the edge these nanocrystals are ⩾ 300Å. We further observe that there is no correlation between the photoluminescence peak position and the nanocrystal diameter. This suggests that the origin of the photoluminescence is due to radiative recombination between defect states in the bulk as well as on the surface of the nanocrystal.
Volume 44, 2021
Continuous Article Publishing mode
Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020
Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020
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