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    • Dielectric properties of Fe(OH)3 thin films formed at solution-gas interface

      P S Nikam K A Pathan

      Volume 17 Issue 5 October 1994 pp 493-498

    • Fulltext

       

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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/017/05/0493-0498

    • Keywords

       

      Capacitance; dielectric constant; loss factor; interfacial polarization; microscopic field distortion

    • Abstract

       

      Dielectric properties of solution-gas interface-formed Fe(OH)3 thin-film capacitors (Al/Fe(OH)3/Al) of various thicknesses have been studied in the frequency range 10–106 Hz at various temperatures (300–443 K). Dielectric constant, ε, increases with increasing film thickness (d) and temperature (T) and decreases with increase of frequency (f). The loss factor (tan δ), showing pronounced minimum with frequency, increases with rise of temperature, and tan δmin shifts to a higher frequency. The large increase in dielectric constant towards low frequency region indicates the possibility of an interfacial polarization mechanism in this region.

    • Author Affiliations

       

      P S Nikam1 K A Pathan1 2

      1. P G Department of Physical Chemistry, M S G College, Malegaon Camp - 423 105, India
      2. Department of Physics, M S G College, Malegaon Camp - 423 105, India

    • Dates

       
      Published
      October 1994
      Manuscript received
      21 March 1994
      Manuscript revised
      22 June 1994

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