• Compositional aspects of the vapour-phase epitaxial growth of GaInAs layers from Ga-In-As-H-Cl system

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    • Keywords


      Vapour-phase epitaxy; surface coverage; growth kinetics; lattice match

    • Abstract


      Following physicochemical analysis, a kinetic model is described with a scheme of reactions in order to predict the growth rate and the compositional aspects of the ternary epitaxial layers GaxIn1 −xAs grown from Ga-In-As-Cl-H vapour phase. Theoretical expressions for the deposition rate have been derived in terms of experimental growth parameters and the relationship between growth kinetics and compositional aspects is investigated. Good agreement is obtained between the layer composition calculated based on the proposed model and the experimental values reported in the literature.

    • Author Affiliations


      V N Mani1 2

      1. Crystal Growth Centre, Anna University, Madras - 600 025, India
      2. Centre for Materials for Electronics Technology (C-MET), A.P.E.L. Building, Kushaiguda, E.C.I.L. (PO), Hyderabad - 500 762, India
    • Dates

  • Bulletin of Materials Science | News

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      Posted on July 25, 2019

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