n-CuInSe2 photoanode has been prepared by spray pyrolysis onto SnO2-deposited glass substrate. The effect of etching (HCl:HNO3=5 : 1 by volume) on photoanode properties has been studied. The best cell had the following parameters:Voc=0·446 V,Jsc=18·32 mA/cm2, ff=0·53 andη=6·22%.
Volume 42 | Issue 6
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