The present study aims at investigating MOCVD technique for the deposition of magnetic oxide thin films using volatile metal-organic compounds as source material. A three-step scheme has been described to form γ-Fe2O3 phase starting from α-Fe2O3 films as-deposited in optically heated atmospheric cold wall CVD reactor. Growth of γ-Fe2O3 in a two-step process has been performed by depositing Fe3O4 phase directly by resistively heated low-pressure CVD (LPCVD) technique. Role of substrate temperature in controlling the oxidation leading to direct formation of metastable γ-Fe2O3 phase (single-step scheme) by atmospheric CVD technique has been described. A new mode of introduction of cobalt in the film, namely heterogeneous dispersion of cobalt in the γ-Fe2O3 matrix, has also been described. Crystallographic structure, microstructure and magnetic properties of the films have been studied in detail. Biaxial vector coil and high-temperature magnetic studies were carried out for determining the nature of anisotropy in the γ-Fe2O3 film. Growth of γ-Fe2O3 films in different schemes have been discussed from the studies of growth kinetics in a cold-and hot-wall-type reactor chambers.
Volume 42 | Issue 6
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