Thin films of AgSe of varying compositions and thicknesses have been formed on glass substrates employing the three-temperature method.I–V characteristics and thermoelectric power, α, of annealed samples have been measured as functions of composition, thickness and temperature of the films. Films exhibitn-type conductivity. Nonohmic conduction in films of AgxSe1−x(0<x<0·5) and AgxSe1−x(0>x>0·5) have been accounted for on the basis of the theory of Rose of defect insulator containing shallow traps and on Schottky emission respectively.
Volume 42 | Issue 5
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