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    • Oxidation kinetics of reaction-sintered silicon carbide

      O P Chakrabarti J Mukerji

      Volume 16 Issue 4 August 1993 pp 325-329

    • Fulltext

       

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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/016/04/0325-0329

    • Keywords

       

      Oxidation; silicon carbide

    • Abstract

       

      The oxidation kinetics of reaction-sintered silicon carbide has been studied over the temperature range 1200° to 1350°C. The material has a bulk density of 3·00 g/cm3 and the unreacted Si content is 22·5% (v/v). The activation energy for oxidation is 28·75 ± 2·61 kcal/mol. It is proposed that the diffusion of oxygen through the growing oxide film is the rate-controlling process.

    • Author Affiliations

       

      O P Chakrabarti1 J Mukerji1

      1. Central Glass and Ceramic Research Institute, Jadavpur, Calcutta - 700 032, India

    • Dates

       
      Published
      August 1993
      Manuscript received
      2 December 1991
      Manuscript revised
      28 December 1992

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