The oxidation kinetics of reaction-sintered silicon carbide has been studied over the temperature range 1200° to 1350°C. The material has a bulk density of 3·00 g/cm3 and the unreacted Si content is 22·5% (v/v). The activation energy for oxidation is 28·75 ± 2·61 kcal/mol. It is proposed that the diffusion of oxygen through the growing oxide film is the rate-controlling process.
Volume 44, 2021
Continuous Article Publishing mode
Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020
Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020
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