• Oxidation kinetics of reaction-sintered silicon carbide

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    • Keywords


      Oxidation; silicon carbide

    • Abstract


      The oxidation kinetics of reaction-sintered silicon carbide has been studied over the temperature range 1200° to 1350°C. The material has a bulk density of 3·00 g/cm3 and the unreacted Si content is 22·5% (v/v). The activation energy for oxidation is 28·75 ± 2·61 kcal/mol. It is proposed that the diffusion of oxygen through the growing oxide film is the rate-controlling process.

    • Author Affiliations


      O P Chakrabarti1 J Mukerji1

      1. Central Glass and Ceramic Research Institute, Jadavpur, Calcutta - 700 032, India
    • Dates

  • Bulletin of Materials Science | News

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