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    • SIMS depth profiling of implanted helium in Al-Mn alloy using CsHe+ molecular ion detection

      A K Tyagi K G M Nair K Krishan

      Volume 16 Issue 1 February 1993 pp 45-49

    • Fulltext

       

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      https://www.ias.ac.in/article/fulltext/boms/016/01/0045-0049

    • Keywords

       

      Ion implantation; secondary ion mass spectrometry; depth profiling; sputtering; molecular ions

    • Abstract

       

      The use of Cs+ primary ions in conjunction with the detection of CsHe+ molecular ions is proposed for the analysis of helium in metals by secondary ion mass spectrometry (SIMS). Concentration depth profiles of helium implanted at 100keV in Al60Mn40 alloy have been measured. Helium concentrations down to about 100 ppm were measured at moderately low sputtering rate of 0·5nm/sec. The experimentally determined implantation profile of helium is compared with the theoretical profile obtained using the Monte Carlo Code TRIM.

    • Author Affiliations

       

      A K Tyagi1 K G M Nair1 K Krishan1

      1. Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603 102, India

    • Dates

       
      Published
      February 1993
      Manuscript received
      19 March 1992
      Manuscript revised
      28 September 1992

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