• SIMS depth profiling of implanted helium in Al-Mn alloy using CsHe+ molecular ion detection

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    • Keywords


      Ion implantation; secondary ion mass spectrometry; depth profiling; sputtering; molecular ions

    • Abstract


      The use of Cs+ primary ions in conjunction with the detection of CsHe+ molecular ions is proposed for the analysis of helium in metals by secondary ion mass spectrometry (SIMS). Concentration depth profiles of helium implanted at 100keV in Al60Mn40 alloy have been measured. Helium concentrations down to about 100 ppm were measured at moderately low sputtering rate of 0·5nm/sec. The experimentally determined implantation profile of helium is compared with the theoretical profile obtained using the Monte Carlo Code TRIM.

    • Author Affiliations


      A K Tyagi1 K G M Nair1 K Krishan1

      1. Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603 102, India
    • Dates

  • Bulletin of Materials Science | News

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