• SIMS depth profiling of implanted helium in Al-Mn alloy using CsHe+ molecular ion detection

    • Fulltext

       

        Click here to view fulltext PDF


      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/016/01/0045-0049

    • Keywords

       

      Ion implantation; secondary ion mass spectrometry; depth profiling; sputtering; molecular ions

    • Abstract

       

      The use of Cs+ primary ions in conjunction with the detection of CsHe+ molecular ions is proposed for the analysis of helium in metals by secondary ion mass spectrometry (SIMS). Concentration depth profiles of helium implanted at 100keV in Al60Mn40 alloy have been measured. Helium concentrations down to about 100 ppm were measured at moderately low sputtering rate of 0·5nm/sec. The experimentally determined implantation profile of helium is compared with the theoretical profile obtained using the Monte Carlo Code TRIM.

    • Author Affiliations

       

      A K Tyagi1 K G M Nair1 K Krishan1

      1. Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603 102, India
    • Dates

       
  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2021-2022 Indian Academy of Sciences, Bengaluru.