• Insulating ZnO film on silicon for MIS application

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      https://www.ias.ac.in/article/fulltext/boms/015/05/0459-0465

    • Keywords

       

      Zinc oxide; thin film; spray-CVD; MIS

    • Abstract

       

      High resistive zinc oxide thin film (∼ 0·5 µm) was deposited on single crystalp-silicon (100) wafers by an inexpensive spray-CVD method and was characterized both optically and electrically. Al/ZnO/Si (MIS) device structure was subsequently fabricated and bothI − V andC − V characteristics were studied. The semiconductor-insulator interface charge density (Dit) was calculated by Terman method and was found to be 3·85 × 1011 cm−2eV−1.

    • Author Affiliations

       

      A Dutta1 S Basu1

      1. Materials Science Centre, Indian Institute of Technology, Kharagpur - 721 302, India
    • Dates

       
  • Bulletin of Materials Science | News

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      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
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