High resistive zinc oxide thin film (∼ 0·5 µm) was deposited on single crystalp-silicon (100) wafers by an inexpensive spray-CVD method and was characterized both optically and electrically. Al/ZnO/Si (MIS) device structure was subsequently fabricated and bothI − V andC − V characteristics were studied. The semiconductor-insulator interface charge density (Dit) was calculated by Terman method and was found to be 3·85 × 1011 cm−2eV−1.
Volume 44, 2021
Continuous Article Publishing mode
Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020
Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020
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