• Band gap and structural parameter variation of CuInSe2(1-x)S2x solid-solution in the form of thin films

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    • Keywords


      Ternary semiconductor compounds; spray pyrolysis; chalcopyrite structure

    • Abstract


      CuInSe2(1-x)S2xthin films were deposited by spray pyrolysis. Lattice parametersa andc, for all composition parametersX, were calculated from the Phillips X-ray diffractometer. The structure remained tetragonal chalcopyrite throughout. Optical band gap (Eg) was determined for the composition parameterX from the transmittance study at room temperature. Variation ofEg,a andc withX was found to be linear.

    • Author Affiliations


      Y D Tembhurkar1 J P Hirde1

      1. Department of Physics, Institute of Science, Nagpur - 440001, India
    • Dates

  • Bulletin of Materials Science | News

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      Posted on July 25, 2019

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