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    • Ion beam-induced and thermal reactions at Fe:GaAs interface

      P G Bilurkar

      Volume 14 Issue 5 October 1991 pp 1231-1240

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      https://www.ias.ac.in/article/fulltext/boms/014/05/1231-1240

    • Abstract

       

      Ion beam-induced and thermal reactions at Fe:GaAs interface are studied by using conversion electron Mössbauer spectroscopy and small angle X-ray diffraction measurements. A thin film of Fe (enriched to 30% in57Fe Mössbauer isotope) was deposited in UHV environment on 〈100 〉 oriented semi-insulating GaAs substrates. Some of the samples were ion-mixed by 130 keV Ar+ ions at dose values of 3 × 1015 and 1016 ions/cm2. The asdeposited and ion-mixed samples were annealed at different temperatures up to a maximum of 500° C. It was observed that ion mixing led to precipitation of disordered and/or defective binary phase along with ferromagnetic Fe3GaAs ternary phase which upon vacuum annealing at 500°C for 1 h leads to a mixture of structurally well-defined Fe3Ga, FeAs and FeAs2 phases. The combined analysis of Mössbauer and X-ray data is shown to reveal the location of the phases below the sample surface. The mechanism for phase formation and associated reaction kinetics at Fe/GaAs interface is discussed in the light of the experimental results.

    • Author Affiliations

       

      P G Bilurkar1

      1. Department of Physics, University of Poona, Pune - 411 007, India

    • Dates

       
      Published
      October 1991
      Manuscript received
      14 November 1990

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