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Thin films of Y-Ba-Cu-O by rf sputtering and study of Josephson effect
Mukesh Kumar N D Kataria V S Tomar V N Ojha N Khare S U M Rao G S N Reddy A K Gupta
International Conference On Superconductivity—I Volume 14 Issue 2 April 1991 pp 461-467
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Keywords
RF sputtered film ;Y-Ba-Cu-O film ;Josephson effect ;microwave irradiation ;effects -
Abstract
Thin films of Y-Ba-Cu-O material have been prepared by rf diode sputtering using a single oxide target on strontium titanate substrates kept at an ambient temperature. It was found difficult to attain stoichiometry of the films identical to that of the target due to resputtering of the films. The influence of sputtering parameters such as target-substrate distance, rf power, gas pressure and substrate temperature in attaining a particular stoichiometry of the film has been studied. The I–V characteristics of the bridges show Shapiro steps when the bridges are irradiated with microwave radiations. The thin film bridges have the dimensions larger than coherence length; thus all the Josephson effect features are understood to arise due to intergranular junctions.
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Author Affiliations
Mukesh Kumar1 2 N D Kataria1 V S Tomar1 V N Ojha1 N Khare1 S U M Rao1 G S N Reddy1 A K Gupta1
- National Physical Laboratory, Dr K S Krishnan Road, New Delhi - 110 012, India
- Department of Physics and Astrophysics, University of Delhi, Delhi - 110 007, India
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Dates
- Published
- April 1991
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Bulletin of Materials Science
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