Thin film electroluminescent devices were fabricated with active layer of ZnS:Mn and different insulators viz Sm2O3, Eu2O3, Na3A1F6, MgF2, CeO2 and SiO in MIS and MISIM structure. The threshold voltage for light emission in AC thin film electroluminescent devices of MIS and MISIM structures is found to depend on the dielectric properties of insulating materials. The observed threshold voltage for these devices and its variations for devices with different insulators are explained using the equivalent circuit for the device and the dielectric properties of the insulting material used for the preparation of device. Variation of threshold voltage with operating time is also studied for some of the devices.
Volume 44, 2021
Continuous Article Publishing mode
Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020
Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020
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