Amorphous thin films of Sb-Se are prepared using the three-temperature method. The films are prepared with atomic compositions from 5–90 at.% Sb. The electrical resistivity, Hall voltage and thermoelectric power of annealed samples have been measured in the temperature range 25 to 250°C. On heat treatment the sharp fall of resistance of the annealed films is attributed to radical structural transformation from amorphous to crystalline. Electrical resistivity, Hall constant and thermoelectric power are found to vary with thickness and composition of the film.
Volume 42 | Issue 6
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