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    • High electron mobility transistors

      S Subramanian

      First National Seminar On GaAs And III–V Compound Semiconductors Volume 13 Issue 1-2 March 1990 pp 121-133

    • Fulltext

       

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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/013/01-02/0121-0133

    • Keywords

       

      High electron mobility transistors; p-modulation doping; inverted HEMT; double heterojunction HEMT; molecular beam epitaxy; velocity modulation transistor

    • Abstract

       

      In this article, I briefly review the physics of the high electron mobility transistor (HEMT), the technological steps involved in the fabrication of the device, the current status, the remaining problems, and some areas of active research in which new developments might be expected in the future.

    • Author Affiliations

       

      S Subramanian1

      1. Tata Institute of Fundamental Research, Bombay - 400 005, India

    • Dates

       
      Published
      March 1990

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