• High electron mobility transistors

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    • Keywords


      High electron mobility transistors; p-modulation doping; inverted HEMT; double heterojunction HEMT; molecular beam epitaxy; velocity modulation transistor

    • Abstract


      In this article, I briefly review the physics of the high electron mobility transistor (HEMT), the technological steps involved in the fabrication of the device, the current status, the remaining problems, and some areas of active research in which new developments might be expected in the future.

    • Author Affiliations


      S Subramanian1

      1. Tata Institute of Fundamental Research, Bombay - 400 005, India
    • Dates

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

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