• Properties of gallium arsenide and indium phosphide impatts at microwave and millimetre-wave frequencies

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    • Keywords

       

      GaAs and InP impatts; microwave and millimetre-wave frequencies; Static properties; high frequency properties

    • Abstract

       

      The static and high frequency properties of GaAs and InP impatts have been investigated for lower microwave and higher millimetre-wave frequencies using the computer simulation programmes developed by the authors. The profiles of negative resistance and reactance in the depletion layer of SDR and DDR devices based on GaAs and InP and their admittance properties have been investigated. The results indicate that InP impatts of the SDR and DDR varieties have higher drift zone voltage, higher negative resistance and higher negative conductance as compared to their GaAs counterparts, both in the microwave frequency and in the millimetre-wave frequency ranges. It is thus observed that higher radio-frequency power can be obtained from InP devices than from GaAs devices.

    • Author Affiliations

       

      S K Roy1 J P Banerjee1 2

      1. Centre of Advanced Study in Radiophysics and Electronics, University of Calcutta, 1, Girish Vidyaratna Lane, Calcutta - 700 009, India
      2. Department of Electronic Science, University of Calcutta, 92, Acharya Prafulla Chandra Road, Calcutta - 700 009, India
    • Dates

       
  • Bulletin of Materials Science | News

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