Formation of a uniformn-layer by multiple29Si+ implantation on LEC grown semi-insulating GaAs 〈100〉 substrate and its characterisation by differential Hall measurement at room temperature is reported. The implantation energies are 60, 160 and 260 keV with corresponding doses of 1 × 1012, 2·55 × 1012 and 3 × 1012 cm−2. Asimplanted, uncapped substrates were furnace-annealed with face-to-face configuration in an N2 ambient at 850°C with arsenic overpressure. After annealing, the samples were subjected to Hall measurements using Van der Pauw configuration. Experimental and theoretical (LSS) profiles are compared. Electrical activation of the dopant atoms was found to range from 65–90% with average mobility values lying between 2000–2300 cm2 V−1 s−1. Uniform concentration of then-layer ∼ 1017 cm−3 up to a depth of 0·3 µm has been achieved. These layers are used for the fabrication of power MESFETs.
Volume 44, 2021
Continuous Article Publishing mode
Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020
Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020
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