• Multiple implantation of29Si+ in semi-insulating GaAs and its characterisation

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      https://www.ias.ac.in/article/fulltext/boms/013/01-02/0095-0098

    • Keywords

       

      Multiple implantation; semi-insulating GaAs substrate; differential Hall measurement; van der Pauw configuration; secondary ion man spectroscopy

    • Abstract

       

      Formation of a uniformn-layer by multiple29Si+ implantation on LEC grown semi-insulating GaAs 〈100〉 substrate and its characterisation by differential Hall measurement at room temperature is reported. The implantation energies are 60, 160 and 260 keV with corresponding doses of 1 × 1012, 2·55 × 1012 and 3 × 1012 cm−2. Asimplanted, uncapped substrates were furnace-annealed with face-to-face configuration in an N2 ambient at 850°C with arsenic overpressure. After annealing, the samples were subjected to Hall measurements using Van der Pauw configuration. Experimental and theoretical (LSS) profiles are compared. Electrical activation of the dopant atoms was found to range from 65–90% with average mobility values lying between 2000–2300 cm2 V−1 s−1. Uniform concentration of then-layer ∼ 1017 cm−3 up to a depth of 0·3 µm has been achieved. These layers are used for the fabrication of power MESFETs.

    • Author Affiliations

       

      M B Dutt1 R Nath1 R Kumar1 Y P Khosla1

      1. Solid State Physics Laboratory, Lucknow Road, Delhi - 110 007, India
    • Dates

       
  • Bulletin of Materials Science | News

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