• Characterisation of vacancy-like defects in III–V compound semiconductors using positron annihilation technique

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    • Keywords

       

      III–V compound semiconductors; positron annihilation technique; vacancy-like defects; irradiation induced defects

    • Abstract

       

      Single crystals of GaP and InSb were irradiated by 3 MeV electrons at 20 K to a total dose of 4 × 1018e/cm2. Isochronal annealing in the temperature region 77–650 K followed the irradiation. In GaP, the positron lifetime measurement indicated the presence of irradiation-induced vacancies in the Ga-sublattice. The vacancies disappeared at two stages observed in temperature ranges 200–300 and 450–550 K. In InSb the positron lifetime was found to increase by 8 ps compared to that in as-grown crystals (i.e. 282±2 ps) after irradiation. The increase indicated the presence of irradiation-induced defects; the crystal was found to recover until 350 K with a sharp annealing stage at 250–350 K.

    • Author Affiliations

       

      A Sen Gupta1

      1. Cyclic Accelerator Division, Saha Institute of Nuclear Physics, 92 Acharya Prafulla Chandra Road, Calcutta - 700 009, India
    • Dates

       
  • Bulletin of Materials Science | News

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