• Characterization of defects in gallium arsenide

    • Fulltext


        Click here to view fulltext PDF

      Permanent link:

    • Keywords


      Gallium arsenide; deep level transient spectroscopy; semi-insulating gallium arsenide; photoconductivity; photo luminescence

    • Abstract


      It is well-known that the properties of semiconductor materials including gallium arsenide are controlled by defects and impurities. The characterization of these defects is important not only for better understanding of the solid state phenomena but also for improved reliability and performance of electronic devices. We have been investigating the defects in gallium arsenide for several years using deep level transient spectroscopy, photoconductivity, transient photoconductivity, photoluminescence etc. Results drawn from our recent studies are presented here to illustrate some of the problems concerning transition metal impurities, process-induced defects, occurrence of intracentre transitions and metastability of deep levels in gallium arsenide.

    • Author Affiliations


      Vikram Kumar1 Y N Mohapatra1

      1. Department of Physics, Indian Institute of Science, Bangalore - 560 012, India
    • Dates

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2023-2024 Indian Academy of Sciences, Bengaluru.