-
- Home
- Journals
- Bulletin of Materials Science
- Volume 13
- Issue 1-2
-
Characterization of defects in gallium arsenide
First National Seminar On GaAs And III–V Compound Semiconductors Volume 13 Issue 1-2 March 1990 pp 83-88
-
-
Fulltext
Click here to view fulltext PDF
Permanent link:
https://www.ias.ac.in/article/fulltext/boms/013/01-02/0083-0088 -
Keywords
Gallium arsenide ;deep level transient spectroscopy ;semi-insulating gallium arsenide ;photoconductivity ;photo luminescence -
Abstract
It is well-known that the properties of semiconductor materials including gallium arsenide are controlled by defects and impurities. The characterization of these defects is important not only for better understanding of the solid state phenomena but also for improved reliability and performance of electronic devices. We have been investigating the defects in gallium arsenide for several years using deep level transient spectroscopy, photoconductivity, transient photoconductivity, photoluminescence etc. Results drawn from our recent studies are presented here to illustrate some of the problems concerning transition metal impurities, process-induced defects, occurrence of intracentre transitions and metastability of deep levels in gallium arsenide.
-
Author Affiliations
- Department of Physics, Indian Institute of Science, Bangalore - 560 012, India
-
Dates
- Published
- March 1990
-
-
Bulletin of Materials Science
Volume 46, 2023
All articles
Continuous Article Publishing mode
-
Bulletin of Materials Science | News
-
Dr Shanti Swarup Bhatnagar for Science and Technology
Posted on October 12, 2020Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020 -
Editorial Note on Continuous Article Publication
Posted on July 25, 2019Click here for Editorial Note on CAP Mode
-