• Characterization of defects in gallium arsenide

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    • Keywords

       

      Gallium arsenide; deep level transient spectroscopy; semi-insulating gallium arsenide; photoconductivity; photo luminescence

    • Abstract

       

      It is well-known that the properties of semiconductor materials including gallium arsenide are controlled by defects and impurities. The characterization of these defects is important not only for better understanding of the solid state phenomena but also for improved reliability and performance of electronic devices. We have been investigating the defects in gallium arsenide for several years using deep level transient spectroscopy, photoconductivity, transient photoconductivity, photoluminescence etc. Results drawn from our recent studies are presented here to illustrate some of the problems concerning transition metal impurities, process-induced defects, occurrence of intracentre transitions and metastability of deep levels in gallium arsenide.

    • Author Affiliations

       

      Vikram Kumar1 Y N Mohapatra1

      1. Department of Physics, Indian Institute of Science, Bangalore - 560 012, India
    • Dates

       
  • Bulletin of Materials Science | News

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