• Photoluminescence and heavy doping effects in InP

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    • Keywords

       

      Photoluminescence; heavy doping effects; Burstein shift; band-gap shrinkage

    • Abstract

       

      Photoluminescence (PL) studies on LPE-grown InP layers doped with selenium and having carrier concentrations from 1 × 1018 to 1 × 1020 cm−3 have been reported in this paper. Measurements at 300 and 77 K showed that the band to band recombination peak energy shifts to values as high as 1·7 eV with increasing doping, the increase being sharp beyond 4 × 1019 cm−3. These results have been explained as being the result of the Burstein shift and the band-gap shrinkage.

    • Author Affiliations

       

      Seishu Bendapudi1 D N Bose1 2

      1. R and D Division, Semiconductor Complex Limited, Phase VIII, S.A.S. Nagar, Punjab - 160 059, India
      2. Materials Science Centre, Indian Institute of Technology, Kharagpur - 721 302, India
    • Dates

       
  • Bulletin of Materials Science | News

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