• LPE growth of InGaAsP:InP high purity layers using rare earth elements

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      https://www.ias.ac.in/article/fulltext/boms/013/01-02/0037-0041

    • Keywords

       

      Liquid phase epitaxy; InGaAsP:InP; III-V compound semiconductors; rare earth elements

    • Abstract

       

      Use of rare earth (RE) elements has allowed the growth of high purity InGaAsP:InP layers in liquid phase epitaxial (LPE) systems. Experiments show that purification of material takes place on account of interaction between the RE and mainly group VI donor impurities.

    • Author Affiliations

       

      R K Sarin1 2 A T Gorelenok1 V I Korolkov1

      1. A F Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad - 194 021, USSR
      2. Materials Science Centre, Indian Institute of Technology, Kharagpur - 721 302, India
    • Dates

       
  • Bulletin of Materials Science | News

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