Use of rare earth (RE) elements has allowed the growth of high purity InGaAsP:InP layers in liquid phase epitaxial (LPE) systems. Experiments show that purification of material takes place on account of interaction between the RE and mainly group VI donor impurities.
Volume 45, 2022
Continuous Article Publishing mode
Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020
Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020
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