Liquid phase epitaxial growth of lattice-matched In0·53Ga0·47As layers on InP substrates is investigated with particular emphasis on the role of interface defects on layer quality. By differential Hall measurements it is established that a bad interface, resulting from the thermal decomposition of InP substrate prior to growth, degrade the electron mobility in all parts of the layer and the effect is most pronounced at regions close to the interface. However layers with much better physical and electrical characteristics are grown following steps to ensure substrate surfaces free from any thermal damage.
Volume 44, 2021
Continuous Article Publishing mode
Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020
Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020
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