• Bulk growth of gallium antimonide crystals by Bridgman method

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    • Keywords


      III–V semiconductor; gallium antimonide; crystal growth; Bridgman technique; isoelectronic doping

    • Abstract


      Gallium antimonide crystals were grown by the vertical Bridgman technique. Effects of ampoule diameter and dopant impurities (Te, P and In) on growth were studied. Crystal stoichiometry and homogeneity were verified with electron-probe microanalysis. Impurity distribution was investigated by secondary ion mass spectrometry (SIMS) and electron probe micro analysis. Variations of etch pit density (EPD) along the length and the diameter were studied by image analysis method. Resistivity, mobility and carrier concentrations were measured along the length of the crystal.

    • Author Affiliations


      U N Roy1 S Basu1

      1. Materials Science Centre, Indian Institute of Technology, Kharagpur - 721 302, India
    • Dates

  • Bulletin of Materials Science | News

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