• Growth of III–V compounds by liquid phase epitaxy

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    • Keywords


      Liquid phase epitaxy; III–V compounds; lattice-matching

    • Abstract


      In this paper, we shall review important aspects of the growth of thin single crystal layers of binary, ternary and quaternary III–V compound semiconductors by liquid phase epitaxy (LPE). The emphasis will be on materials which can be grown lattice-matched to the common substrate materials GaAs, InP and GaSb. Usefulness and limitations of the LPE technique are highlighted.

    • Author Affiliations


      B M Arora1

      1. Tata Institute of Fundamental Research, Homi Bhabha Road, Bomay - 400 005, India
    • Dates

  • Bulletin of Materials Science | News

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