• Bulk growth of polycrystalline indium phosphide

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    • Keywords

       

      InP; crystal growth; III V compounds

    • Abstract

       

      The growth of polycrystalline indium phosphide of different grain sizes varying from 15µm to 4000µm has been discussed. The materials have been characterized by a variety of methods including electrical and optical techniques. Device application of the InP prepared was demonstrated by the fabrication of Ag Schottky diodes andp+-n junction using Zn diffusion. The variation of mobility with varying grain size has been determined experimentally and the results interpreted taking into account the effect of compensation.

    • Author Affiliations

       

      J N Roy1 2

      1. Semiconductor Division, Materials Science Centre, Indian Institute of Technology, Kharagpur - 721 302, India
      2. R and D Department, Semiconductor Complex Ltd., Phase VIII, SAS Nagar, Punjab - 160 059, India
    • Dates

       
  • Bulletin of Materials Science | News

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      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
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      Posted on July 25, 2019

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