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      https://www.ias.ac.in/article/fulltext/boms/011/04/0269-0275

    • Keywords

       

      Gallium phosphide; direct synthesis; liquid encapsulated vertical Bridgman technique; crystal growth of electronic materials

    • Abstract

       

      Gallium phosphide is a typical III–V compound semiconductor and is also an important electronic material. The synthesis and single crystal growth of this compound by melt methods is rendered very difficult because of the large phosphorus vapour pressure. A high pressure vessel with internal heating and a quartz reactor was first developed for the direct synthesis of gallium phosphide. The crystal growth was carried out in a second high pressure chamber rated for 100 bars gas pressure and equipped with the paraphernalia for crystal growth. Single crystals of gallium phosphide were grown from the polycrystalline starting material by the vertical Bridgman method and the vapour pressure problem was overcome by encapsulating the melt in a column of molten boric oxide. Both boron nitride and silica were employed as crucibles, and with the former, single crystal rods of 8–10 mm diameter and 10–15 mm length were obtained.

    • Author Affiliations

       

      K Govinda Rajan1 N V Chandra Shekar1 G V N Rao1 A J Singh1 R M Iyer1 2

      1. Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603 102, India
      2. Chemistry Division, Bhabha Atomic Research Centre, Bombay - 400 085, India

    • Dates

       
      Published
      December 1988
      Manuscript received
      26 September 1988

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

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      Posted on July 25, 2019

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