Electrodeposited GaAs and AlSb thin film semiconductors were prepared under various deposition conditions. Reasonable stoichiometry could be attained as revealed by EDAX studies. The best stoichiometry was obtained are Ga1·04As0·96 and Al1·12Sb0·88. The band gap of the GaAs and AlSb films was ∼1·5 eV and 1·6 eV respectively. The electrochemical and photoelectrochemical studies on these films are reported with different redox-couples in aqueous and non-aqueous medium.
Volume 42 | Issue 6
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