• Transient photocurrent response of p-Si/0·5 M H2SO4 interface

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    • Keywords


      Transient photocurrent response; photoelectrochemistry; surface states

    • Abstract


      An experimental study of the transient photocurrent response of p-Si/0·5 M H2SO4 interface is presented. The results have been analysed in terms of a theoretical model wherein surface states are assumed to be present at a discrete levelEs and communicate exclusively with the semiconductor. The results indicate substantial Fermi level pinning at this interface. Influence of surface oxide films and Pt deposition on the transient response is also discussed.

    • Author Affiliations


      K G Anuradha1 A Q Contractor1

      1. Department of Chemistry, Indian Institute of Technology, Powai, Bombay - 400 076, India
    • Dates

  • Bulletin of Materials Science | News

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