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    • Fulltext

       

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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/010/03/0181-0185

    • Keywords

       

      Boric oxide; moisture control; crystal growth of electronic materials

    • Abstract

       

      Boric oxide, used as an encapsulant, prevents loss of volatile components in the growth of compound semiconductors. As the material readily absorbs moisture, and as moisture content has to be kept below a certain level, preparation and handling of this material becomes an involved process. In the present paper we report the process developed for preparing boric oxide from boric acid and growth of cylindrical rods of the desired diameter. The grown boric oxide is characterized by thermal analysis. Infrared characterization is also a powerful method and the advantages of this technique as well as the problems faced in taking the IR spectrum are discussed.

    • Author Affiliations

       

      K Govinda Rajan1 N V Chandra Shekar1 M Sekar1 D Champion Christdoss Selvakumar1 2

      1. Materials Science Laboratory, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603 102, India
      2. American College, Madurai - 625 002, India

    • Dates

       
      Published
      May 1988
      Manuscript received
      27 January 1988
      Manuscript revised
      28 March 1988

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

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